Prost, Werner; Khorenko, Victor; Mofor, Augustine-Che; Neumann, Stefan; Poloczek, Artur; Matiss, Andreas; Bakin, A.; Schlachetzki, Andreas; Tegude, Franz-Josef:
High performance III/V RTD and PIN diode on a silicon (001) substrate
2007
In: Applied Physics A: Materials Science and Porcessing, Jg. Vol. 87 (2007), Heft No. 3, S. 539 - 544
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
High performance III/V RTD and PIN diode on a silicon (001) substrate
Autor(in):
Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Khorenko, Victor; Mofor, Augustine-Che; Neumann, Stefan; Poloczek, Artur im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Matiss, Andreas; Bakin, A.; Schlachetzki, Andreas; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2007
Erschienen in:
Applied Physics A: Materials Science and Porcessing, Jg. Vol. 87 (2007), Heft No. 3, S. 539 - 544
ISSN:
ISSN:

Abstract:

We report on the fabrication of high performance InP-based devices on an exact (001)Si-substrate. On an InP-on-Si quasi-substrate, the growth of superlattices and low-temperature InAlAs buffer for surface and device layer improvement is investigated. The selected device examples are an InGaAsP PIN diode and an (In)AlAs/In(Ga)As resonant tunnelling diodes. The functionality of these examples relies sensitively on sharp interfaces of ultra thin layers and a high optical quality of epitaxially grown III/V layers silicon substrates. A qualitative improvement is obtained for a low-temperature InAlAs buffer layer grown prior to the of device layers. Based on device models extracted from the fabricated devices a potentially low-cost optical receiver circuit on a Si-substrate is proposed and simulated using HSPICE up to 10 Gbit/s.