Regolin, Ingo; Sudfeld, Daniela; Lüttjohann, S.; Khorenko, Victor; Prost, Werner; Kästner, J.; Dumpich, Günter; Meier, C.; Lorke, Axel; Tegude, Franz-Josef:

Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (1 1 1) GaAs

In: Journal of Crystal Growth, Jg. Vol. 298 (2007), S. 607 - 611
ISSN: 0022-0248
Zeitschriftenaufsatz / Fach: Elektrotechnik
GaAs/InxGa1-xAs/GaAs hetero structures nanowires were grown by metal-organic vapor-phase epitaxy on (I I I)B GaAs substrate using the vapor-liquid-solid growth mode. The diameter of the nanowires was defined by monodisperse gold nanoparticles deposited on the GaAs substrate. High-resolution electron transmission microscopy  investigation revealed the structural properties of the grown whiskers using bright field images. Using energy disperse X-ray spectroscopy measurements, the composition along and perpendicular to the vertical growth direction has been determined. In addition, the sharpness of the  created heterojunctions was investigated. Finally, micro  photoluminescence measurements on single GaAs/InGaAs/GaAs whiskers were carried out.