GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles
In: Journal of Applied Physics, Jg. Vol. 101 (2007) ; No. 5, S. 054318 (5 pages)
ISSN: 0021-8979, 1089-7550
Zeitschriftenaufsatz / Fach: Elektrotechnik
GaAs nanowhiskers were grown by metal-organic vapor-phase epitaxy on (111)B GaAs substrates. The diameter of the nanowhiskers was defined by monodisperse Fe nanoparticles deposited on the GaAs substrate from the vapor phase. The growth temperature of the whiskers was investigated from 480 to 520 degrees C. The whiskers are preferentially directed along the crystal orientations of < 001 >, < 111 >, and their equivalents. High-resolution transmission electron microscopy characterization including energy disperse x-ray spectroscopy measurements revealed not only iron oxide but also arsenic inside the seed particle at the top of the GaAs whiskers. This indicates that the particle stays at the top during the whisker growth.
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