P-type doping of GaAs nanowires
Gallium arsenide (GaAs) nanowires with diameters of 150 nm have been grown via metal-organic vapor deposition and were subsequently implanted with Zn-64 ions. The amorphized nanowires were annealed at 800 degrees C under arsenic overpressure resulting into a full recrystallization of the nanowires as well as an activation of the implanted acceptors. Consequently, we observe a strong increase in conductivity of the GaAs:Zn nanowires, where a simple estimation of the activated acceptors matches the implantation concentration.
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