P-type doping of GaAs nanowires
In: Applied Physics Letters, Jg. Vol. 92 (2008) ; No. 16, S. 2912129 (3 pages)
ISSN: 0003-6951, 1077-3118
Zeitschriftenaufsatz / Fach: Elektrotechnik
Gallium arsenide (GaAs) nanowires with diameters of 150 nm have been grown via metal-organic vapor deposition and were subsequently implanted with Zn-64 ions. The amorphized nanowires were annealed at 800 degrees C under arsenic overpressure resulting into a full recrystallization of the nanowires as well as an activation of the implanted acceptors. Consequently, we observe a strong increase in conductivity of the GaAs:Zn nanowires, where a simple estimation of the activated acceptors matches the implantation concentration.
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