Jin, Z.; Liu, X.; Prost, Werner; Tegude, Franz-Josef:
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
2008
In: Solid-State Electronics, Jg. Vol. 52 (2008), Heft No. 7, S. 1088 - 1091
Artikel/Aufsatz in Zeitschrift / Fach: Elektrotechnik
Titel:
Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
Autor(in):
Jin, Z.; Liu, X.; Prost, Werner im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Tegude, Franz-Josef im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr
2008
Erschienen in:
Solid-State Electronics, Jg. Vol. 52 (2008), Heft No. 7, S. 1088 - 1091
ISSN

Abstract:

Surface-recombination-free InGaAs/InP HBTs with graded base have been demonstrated. The HBTs were passivated by ammonium sulfide. The current gain of the nonself-aligned HBTs was independent of the emitter periphery, indicating that the surface recombination was removed by the passivation. For the self-aligned HBTs, the current gain was still dependent on the emitter periphery after the passivation due to the base contact recombination. A surface leakage channel has been identified to result in a significant increase in the base contact recombination. The passivation has two effects: one is the surface recombination velocity reduction and the other is the surface leakage channel elimination.