Material and doping transitions in single GaAs-based nanowires probed by Kelvin probe force microscopy

In: Nanotechnology, Jg. 20 (2009) ; Nr. 38, S. 385702
ISSN: 0957-4484, 1361-6528
Zeitschriftenaufsatz / Fach: Elektrotechnik; Physik; Materialtechnik
Zentrale wissenschaftliche Einrichtungen » Center for Nanointegration Duisburg-Essen (CeNIDE)
We demonstrate the potential of Kelvin probe force microscopy for simultaneously probing the topography and the work function of individual nanowires. Our technique allows us to visualize both the material and the doping contrast in single GaAs-based nanowires without the need to electrically contact the nanowires. In a GaAs/GaP  heterostructure nanowire, a core-shell structure is found. This is attributed to a thermally activated radial overgrowth of GaAs, while in the GaP region the vertical nanowire growth dominates. In partially p-doped GaAs nanowires the doping transitions can be localized and the  width of the depletion layer is estimated.