Modeling of minibands and electronic transport in one-dimensional stacks of InAs/GaAs quantum dots
We investigate the effect of the electron miniband energy spectrum of periodic 1D stacks of disk-shaped InAs quantum dots in GaAs on their electronic transport characteristics. The widely used approximation of a constant relaxation time is not adequate for a stack of semiconductor quantum dots. Certain windows of concentration are revealed, where arrays of quantum dots possess a geometry-controlled enhanced efficiency as thermoelectric converters.
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