Seemayer, Andreas; Hommes, Alexander; Hümann, Sascha; Schulz, Stephan; Wandelt, Klaus:
Characterization of GaSb thin films from tailor-made single-source precursors
2008
In: Journal of Crystal Growth, Band 310 (2008), S. 4831 - 4834
Artikel/Aufsatz in Zeitschrift / Fach: Chemie
Titel:
Characterization of GaSb thin films from tailor-made single-source precursors
Autor(in):
Seemayer, Andreas; Hommes, Alexander; Hümann, Sascha; Schulz, Stephan im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Wandelt, Klaus
Erscheinungsjahr:
2008
Erschienen in:
Journal of Crystal Growth, Band 310 (2008), S. 4831 - 4834
DOI:

Abstract:

We investigated the growth and surface properties of GaSb thin films on a Si(0 0 1) substrate prepared using a tailor-made fully alkyl-substituted heterocyclic single-source precursor. The precursor properties were monitored during the evaporation process by residual gas analysis (RGA). The initial film growth was monitored by Auger electron spectroscopy (AES). Using a high-vacuum cold wall reactor, dense GaSb films could be produced and were characterized by AES, AFM and synchrotron X-ray photoelectron spectroscopy (S-XPS). The results are discussed in terms of a correlation of the electronic and geometrical properties with the composition and structure of the films.