Tailor-made Precursors for the Deposition of Sb-containing Materials by MOCVD Process
In: Journal of Crystal Growth, Jg. 310 (2008), S. 4715-4719
Zeitschriftenaufsatz / Fach: Chemie
Crystalline GaSb films were deposited using the tailor-made single-source precursor [t-Bu2GaSbEt2] in a specifically designed MOCVD reactor under HV conditions at low temperatures. In addition, tetraethyldistibine Sb2Et4 has been successfully used as the precursor for the deposition of crystalline antimony films at low temperatures.