Abstract:

WeinvestigatedthegrowthandsurfacepropertiesofGaSbthinfilmsonaSi(001)substrateprepared using atailor-madefullyalkyl-substitutedheterocyclicsingle-sourceprecursor.Theprecursor properties weremonitoredduringtheevaporationprocessbyresidualgasanalysis(RGA).Theinitial film growthwasmonitoredbyAugerelectronspectroscopy(AES).Usingahigh-vacuumcoldwall reactor,denseGaSbfilmscouldbeproducedandwerecharacterizedbyAES,AFMandsynchrotronX-ray photoelectronspectroscopy(S-XPS).Theresultsarediscussedintermsofacorrelationoftheelectronic and geometricalpropertieswiththecompositionandstructureofthefilms.