Hümann, Sascha:

Characterization of GaSb thin films from tailor-made single-source precursors

In: Journal of Crystal Growth, Jg. 310 (2008), S. 4831–4834
Zeitschriftenaufsatz / Fach: Chemie
Abstract:
WeinvestigatedthegrowthandsurfacepropertiesofGaSbthinfilmsonaSi(001)substrateprepared
using atailor-madefullyalkyl-substitutedheterocyclicsingle-sourceprecursor.Theprecursor
properties weremonitoredduringtheevaporationprocessbyresidualgasanalysis(RGA).Theinitial
film growthwasmonitoredbyAugerelectronspectroscopy(AES).Usingahigh-vacuumcoldwall
reactor,denseGaSbfilmscouldbeproducedandwerecharacterizedbyAES,AFMandsynchrotronX-ray
photoelectronspectroscopy(S-XPS).Theresultsarediscussedintermsofacorrelationoftheelectronic
and geometricalpropertieswiththecompositionandstructureofthefilms.