Hümann, Sascha:
Characterization of GaSb thin films from tailor-made single-source precursors
2008
In: Journal of Crystal Growth, Band 310 (2008), S. 4831 - 4834
Artikel/Aufsatz in Zeitschrift / Fach: Chemie
Titel:
Characterization of GaSb thin films from tailor-made single-source precursors
Autor(in):
Hümann, Sascha
Erscheinungsjahr
2008
Erschienen in:
Journal of Crystal Growth, Band 310 (2008), S. 4831 - 4834
WWW URL

Abstract:

WeinvestigatedthegrowthandsurfacepropertiesofGaSbthinfilmsonaSi(001)substrateprepared using atailor-madefullyalkyl-substitutedheterocyclicsingle-sourceprecursor.Theprecursor properties weremonitoredduringtheevaporationprocessbyresidualgasanalysis(RGA).Theinitial film growthwasmonitoredbyAugerelectronspectroscopy(AES).Usingahigh-vacuumcoldwall reactor,denseGaSbfilmscouldbeproducedandwerecharacterizedbyAES,AFMandsynchrotronX-ray photoelectronspectroscopy(S-XPS).Theresultsarediscussedintermsofacorrelationoftheelectronic and geometricalpropertieswiththecompositionandstructureofthefilms.