Buecking, N.; Kratzer, Peter; Scheffler, M.; Knorr, A.:
Linking Density Functional Theory and Density Matrix Theory: picosecond electron relaxation at the Si(100) surface
In: Physical Review B : Condensed matter and materials physics, Band 77 (2008), 233305/1-4
2008Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)
Damit verbunden: 1 Publikation(en)
Titel:
Linking Density Functional Theory and Density Matrix Theory: picosecond electron relaxation at the Si(100) surface
Autor*in:
Buecking, N.;Kratzer, PeterUDE
GND
105650420
LSF ID
14826
ORCID
0000-0001-5947-1366ORCID iD
ORCID
0000-0003-4790-4616ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
;Scheffler, M.;Knorr, A.
Erscheinungsjahr:
2008
DOI
10.1103/PhysRevB.77.233305
Erschienen in
Physical Review B : Condensed matter and materials physics
Erscheinungsort:
College Park
Verlag:
American Physical Society (APS)
in:
Band 77 (2008), 233305/1-4
ISSN
1550-235X Verfügbarkeit online & gedruckt anzeigen
ISSN
2469-9969 Verfügbarkeit online & gedruckt anzeigen
ISSN
1098-0121 Verfügbarkeit online & gedruckt anzeigen
ISSN
2469-9950 Verfügbarkeit online & gedruckt anzeigen
ZDB ID
1473011-X
Signatur der UB:
67 P 5
Notiz:
1.1970 - 92.2015
Nachfolger:
Physical Review B

Abstract:

We describe an approach that links the density-matrix theory for electron transport and relaxation with the density-functional theory for electronic structure. Our analysis of the electron dynamics at Si(100) reveals an unanticipated phonon bottleneck between bulklike and surface states. The fastest relaxation process observed in recent two-photon photoemission experiments is in good agreement with the calculated phonon-mediated intrasurface-band scattering.