The thermal decomposition of Sn(CH3)4 was studied behind reflected shock waves at temperatures between 1025 and 1390 K and pressures around 160 kPa by applying atomic resonance absorption spectroscopy for time-resolved measurements of Sn atoms at 286.33 nm. The experiments show an induction period where the first three decomposition steps take place before finally Sn atoms are formed. The Sn-atom profiles could be described by a reaction mechanism containing the four decomposition steps and a Sn-atom consumption reaction. It is not possible to obtain all necessary rate coefficients by the simulation of the Sn-atom profiles. Therefore, the rate coefficient of the first decomposition step was taken from literature  and the second step was considered as fast.