Seguin, R.; Schliwa, A.; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, D.; Winkelnkemper, M.; Hammerschmidt, T.; Kratzer, Peter:
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
In: Applied Physics Letters, Band 89 (2006), 263109/1-3
2006Artikel/Aufsatz in Zeitschrift
Physik (inkl. Astronomie)
Titel:
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
Autor*in:
Seguin, R.;Schliwa, A.;Germann, T. D.;Rodt, S.;Pötschke, K.;Strittmatter, A.;Pohl, U. W.;Bimberg, D.;Winkelnkemper, M.;Hammerschmidt, T.;Kratzer, PeterUDE
GND
1266252894
LSF ID
14826
ORCID
0000-0001-5947-1366ORCID iD
Sonstiges
der Hochschule zugeordnete*r Autor*in
Erscheinungsjahr:
2006
DOI
10.1063/1.2424446
Erschienen in
Applied Physics Letters
in:
Band 89 (2006), 263109/1-3

Abstract:

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within 8-band k·p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.