Seguin, R.; Schliwa, A.; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, D.; Winkelnkemper, M.; Hammerschmidt, T.; Kratzer, Peter:
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
2006
In: Applied Physics Letters, Band 89 (2006), 263109/1-3
Artikel/Aufsatz in Zeitschrift / Fach: Physik
Titel:
Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots
Autor(in):
Seguin, R.; Schliwa, A.; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, D.; Winkelnkemper, M.; Hammerschmidt, T.; Kratzer, Peter im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2006
Erschienen in:
Applied Physics Letters, Band 89 (2006), 263109/1-3
DOI:

Abstract:

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within 8-band k·p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.