Preparation of Submicron-Structured Alkylsiloxane Monolayers Using Prepatterned Silicon Substrates by Laser Direct Writing
A new constructive method for the preparation of laterally structured alkylsiloxane monolayers is demonstrated. Laser direct writing has been used to create oxide patterns on H-terminated Si(100) samples under ambient conditions. Depending on the laser power and the writing speed, oxide structures with a lateral resolution below 500 nm are prepared routinely. The patterned samples are suitable as temporary templates for the preparation of laterally structured octadecylsiloxane monolayers. Prior to immersion in an octadecyltrichlorosilane solution, however, hydration of the samples in water is essential to facilitate a selective coating of the oxidized areas. After coating, atomic force microscopy reveals the formation of octadecylsiloxane islands exclusively on top of the oxide lines.
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