Mergel, D.; Schenkel, M.; Ghebre, M.; Sulkowski, M.:
Structural and electrical properties of In2O3:Sn films prepared by radio-frequency sputtering.
2001
In: Thin Solid Films (Thin Solid Films), Jg. 392 (2001), Heft 1, S. 91 - 97
Artikel/Aufsatz in Zeitschrift / Fach: Chemie
Titel:
Structural and electrical properties of In2O3:Sn films prepared by radio-frequency sputtering.
Autor(in):
Mergel, D. im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen; Schenkel, M.; Ghebre, M.; Sulkowski, M. im Online-Personal- und -Vorlesungsverzeichnis LSF anzeigen
Erscheinungsjahr:
2001
Erschienen in:
Thin Solid Films (Thin Solid Films), Jg. 392 (2001), Heft 1, S. 91 - 97
ISSN:

Abstract:

In2O3:Sn (ITO) films has been prepd. by RF sputtering at 380 Deg with the O admixt. to the sputter gas being varied systematically. At a low O flux, the (400) grains are much larger than grains with other orientations. With increasing O flux, grain diam. and free electron concn. decrease and the texture of the crystallog. orientations changes from (400) to (622) dominant. It is suggested to est. the fraction of material with a certain orientation by the product of height and 3rd power of the width of the corresponding x-ray peak. This yields the same total x-ray scattering intensity for all samples. The structural properties are explained by a model of dynamic incorporation and segregation of O during film growth. The electron mobility as a function of the electron d. roughly follows a power law similar to that of single crystals, indicating that it is dominated by scattering at ionized donors.