Zur atomaren und elektronischen Struktur der Oberflächen und Grenzflächen antimonhaltiger Halbleiter

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The effect of the group-V termination of GaAsSb(100) surfaces on the sharpness of InP/GaAsSb heterointerfaces was investigated. Lattice matched GaAsSb/InP(100)-layers were grown by metalorganic vapor phase epitaxy (MOVPE). Contamination free sample transfer from the MOVPE reactor into ultrahigh vacuum (UHV) allowed for the correlation of in-situ reflectance anisotropy/difference (RA/RD) spectra with low energy electron diffraction (LEED) and photoelectron spectra (XPS/UPS). The in-situ RA spectra indicated that the GaAsSb surface was Sb-rich during growth and turned preferably into an As-rich surface after growth. With LEED and XPS the Sb-rich and As-rich surfaces were correlated with (4×3) and c(4×4) symmetries, respectively. These are well known reconstructions from the related binaries GaAs and GaSb. The study of the InP/GaAsSb interfaces compared the two ordered GaAsSb(100) surfaces as templates for InP growth. XPS measurements of InP/GaAsSb interfaces taken in UHV and I-V curves of InP/GaAsSb resonant tunneling diodes indicated that Sb segregation into a subsequent InP layer was significantly lower when the InP film was grown on the c(4×4) reconstructed GaAsSb surface compared to the (4×3) reconstructed surface.
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Dokumententyp:
Wissenschaftliche Abschlussarbeiten » Dissertation
Fakultät / Institut:
Fakultät für Ingenieurwissenschaften » Elektrotechnik und Informationstechnik
Dewey Dezimal-Klassifikation:
600 Technik, Medizin, angewandte Wissenschaften » 620 Ingenieurwissenschaften
Stichwörter:
surface reconstruction, antimonides, MOVPE, III-V semiconductor, MOCVD, RDS, RAS, heterointerfaces, ternary semiconductor alloys
Beitragende:
Prof. Dr. rer. nat. Tegude, Franz-Josef [Betreuer(in), Doktorvater]
Prof. Dr. rer. nat. Willig, F. [Gutachter(in), Rezensent(in)]
Sprache:
Deutsch
Kollektion / Status:
Dissertationen / Dokument veröffentlicht
Datum der Promotion:
06.04.2005
Dokument erstellt am:
06.04.2005
Dateien geändert am:
17.04.2007
Medientyp:
Text